High-k gate electrode structure formed after transistor fabrication by using a spacer

ABSTRACT

During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Generally, the present disclosure relates to sophisticated integratedcircuits including transistor elements comprising highly capacitive gatestructures on the basis of a metal-containing electrode material and ahigh-k gate dielectric of increased permittivity compared toconventional gate dielectrics, such as silicon dioxide and siliconnitride.

2. Description of the Related Art

The fabrication of advanced integrated circuits, such as CPUs, storagedevices, ASICs (application specific integrated circuits) and the like,requires the formation of a large number of circuit elements on a givenchip area according to a specified circuit layout, wherein field effecttransistors represent one important type of circuit element thatsubstantially determines performance of the integrated circuits.Generally, a plurality of process technologies are currently practiced,wherein, for many types of complex circuitry, including field effecttransistors, MOS technology is currently one of the most promisingapproaches due to the superior characteristics in view of operatingspeed and/or power consumption and/or cost efficiency. During thefabrication of complex integrated circuits using, for instance, MOStechnology, millions of transistors, e.g., N-channel transistors and/orP-channel transistors, are formed on a substrate including a crystallinesemiconductor layer. A field effect transistor, irrespective of whetheran N-channel transistor or a P-channel transistor is considered,typically comprises so-called PN junctions that are formed by aninterface of highly doped regions, referred to as drain and sourceregions, with a slightly doped or non-doped region, such as a channelregion, disposed adjacent to the highly doped regions. In a field effecttransistor, the conductivity of the channel region, i.e., the drivecurrent capability of the conductive channel, is controlled by a gateelectrode formed adjacent to the channel region and separated therefromby a thin insulating layer. The conductivity of the channel region, uponformation of a conductive channel due to the application of anappropriate control voltage to the gate electrode, depends on the dopantconcentration, the mobility of the charge carriers and, for a givenextension of the channel region in the transistor width direction, onthe distance between the source and drain regions, which is alsoreferred to as channel length. Hence, in combination with the capabilityof rapidly creating a conductive channel below the insulating layer uponapplication of the control voltage to the gate electrode, theconductivity of the channel region substantially affects the performanceof MOS transistors. Thus, as the speed of creating the channel, whichdepends on the conductivity of the gate electrode, and the channelresistivity substantially determine the transistor characteristics, thescaling of the channel length, and associated therewith the reduction ofchannel resistivity and increase of gate resistivity, is a dominantdesign criterion for accomplishing an increase in the operating speed ofthe integrated circuits.

Presently, the vast majority of integrated circuits are based on silicondue to substantially unlimited availability, the well-understoodcharacteristics of silicon and related materials and processes and theexperience gathered during the last 50 years. Therefore, silicon willlikely remain the material of choice for future circuit generationsdesigned for mass products. One reason for the dominant importance ofsilicon in fabricating semiconductor devices has been the superiorcharacteristics of a silicon/silicon dioxide interface that allowsreliable electrical insulation of different regions from each other. Thesilicon/silicon dioxide interface is stable at high temperatures and,thus, allows the performance of subsequent high temperature processes asare required, for example, for anneal cycles to activate dopants and tocure crystal damage without sacrificing the electrical characteristicsof the interface.

For the reasons pointed out above, in field effect transistors, silicondioxide is preferably used as a gate insulation layer that separates thegate electrode, frequently comprised of polysilicon or othermetal-containing materials, from the silicon channel region. In steadilyimproving device performance of field effect transistors, the length ofthe channel region has continuously been decreased to improve switchingspeed and drive current capability. Since the transistor performance iscontrolled by the voltage supplied to the gate electrode, to invert thesurface of the channel region to a sufficiently high charge density forproviding the desired drive current for a given supply voltage, acertain degree of capacitive coupling, provided by the capacitor formedby the gate electrode, the channel region and the silicon dioxidedisposed therebetween, has to be maintained. It turns out thatdecreasing the channel length requires an increased capacitive couplingto avoid the so-called short channel behavior during transistoroperation. The short channel behavior may lead to an increased leakagecurrent and to a dependence of the threshold voltage on the channellength. Aggressively scaled transistor devices with a relatively lowsupply voltage and thus reduced threshold voltage may suffer from anexponential increase of the leakage current while also requiringenhanced capacitive coupling of the gate electrode to the channelregion. Thus, the thickness of the silicon dioxide layer has to becorrespondingly decreased to provide the required capacitance betweenthe gate and the channel region. For example, a channel length ofapproximately 0.08 μm may require a gate dielectric made of silicondioxide as thin as approximately 1.2 nm. Although, generally, high speedtransistor elements having an extremely short channel may preferably beused for high speed applications, whereas transistor elements with alonger channel may be used for less critical applications, such asstorage transistor elements, the relatively high leakage current causedby direct tunneling of charge carriers through an ultra-thin silicondioxide gate insulation layer may reach values for an oxide thickness inthe range or 1-2 nm that may not be compatible with thermal design powerrequirements for performance driven circuits.

Therefore, replacing silicon dioxide as the material for gate insulationlayers has been considered, particularly for extremely thin silicondioxide gate layers. Possible alternative materials include materialsthat exhibit a significantly higher permittivity so that a physicallygreater thickness of a correspondingly formed gate insulation layerprovides a capacitive coupling that would be obtained by an extremelythin silicon dioxide layer. Therefore, it has been suggested to replacesilicon dioxide with high permittivity materials such as tantalum oxide(Ta₂O₅) with a k of approximately 25, strontium titanium oxide (SrTiO₃)having a k of approximately 150, hafnium oxide (HfO₂), HfSiO, zirconiumoxide (ZrO₂) and the like.

Additionally, transistor performance may be increased by providing anappropriate conductive material for the gate electrode to replace theusually used polysilicon material, since polysilicon may suffer fromcharge carrier depletion at the vicinity of the interface to the gatedielectric, thereby reducing the effective capacitance between thechannel region and the gate electrode. Thus, a gate stack has beensuggested in which a high-k dielectric material provides enhancedcapacitance based on the same thickness as a silicon dioxide layer,while additionally maintaining leakage currents at an acceptable level.On the other hand, the non-polysilicon material, such as titaniumnitride and the like, may be formed so as to connect to the high-kdielectric material, thereby substantially avoiding the presence of adepletion zone. Since, typically, a low threshold voltage of thetransistor, which represents the voltage at which a conductive channelforms in the channel region, is desired to obtain the high drivecurrents, the controllability of the respective channel requirespronounced lateral dopant profiles and dopant gradients, at least in thevicinity of the PN junctions. Therefore, so-called halo regions areusually formed by ion implantation in order to introduce a dopantspecies whose conductivity type corresponds to the conductivity type ofthe remaining channel and semiconductor region to “reinforce” theresulting PN junction dopant gradient after the formation of respectiveextension and deep drain and source regions. In this way, the thresholdvoltage of the transistor significantly determines the controllabilityof the channel, wherein a significant variance of the threshold voltagemay be observed for reduced gate lengths. Hence, by providing anappropriate halo implantation region, the controllability of the channelmay be enhanced, thereby also reducing the variance of the thresholdvoltage, which is also referred to as threshold roll-off, and alsoreducing significant variations of transistor performance with avariation in gate length. Since the threshold voltage of the transistorsis significantly determined by the work function of the metal-containinggate material, an appropriate adjustment of the effective work functionwith respect to the conductivity type of the transistor underconsideration has to be guaranteed.

After forming sophisticated gate structures including a high-kdielectric and a metal-based gate material, however, high temperaturetreatments may be required, which may result in a reduction of thepermittivity of the gate dielectric caused by an increase of the oxygencontents in the high-k material, thereby also resulting in an increaseof layer thickness. Furthermore, a shift of the work function may beobserved which is believed to be associated with the enhanced oxygenaffinity of many high-k dielectric materials, resulting in aredistribution of oxygen from trench isolation structure via the high-kdielectric material of shared gate line structures, in particular at themoderately high temperatures required for completing the transistorsafter forming the high-k metal gate structure. Due to this Fermi levelshift in the metal-containing gate materials, the resulting thresholdvoltage may become too high to enable the use of halo implantationtechniques for adjusting the transistor characteristics with respect tocontrolling threshold voltage roll-off to allow high drive currentvalues at moderately low threshold voltages.

The moderate and high temperatures during the transistor fabricationprocess may be avoided by using an integration scheme, in which the gateelectrode structure is formed according to conventional techniques andis finally replaced by a sophisticated high-k metal gate structure,wherein the respective metals are appropriately selected so as to havesuitable work functions for N-channel transistors and P-channeltransistors, respectively. Thus, in this integration scheme, theconventional polysilicon/oxide gate structure is removed and replaced bythe high-k metal stack after the final high temperature anneal processesand the silicidation of the drain and source regions. Hence, the high-kmetal gate electrode structure may only experience low temperatures usedin the back-end processing, that is, temperatures of approximately 400°C., thereby substantially avoiding the above-described problems withrespect to altering the characteristics of the high-k material andshifting the work functions of the metals in the gate electrodes.

Consequently, the replacement of the polysilicon/silicon dioxide gateelectrode structure in a very advanced manufacturing stage of thetransistor, i.e., after any high temperature processes, is a verypromising approach for fabricating transistor elements with enhancedgate electrode structures. Due to these advantages, however, a certaindegree of defects may be observed in sophisticated applications, as willbe described in more detail with reference to FIGS. 1 a-1 c.

FIG. 1 a schematically illustrates a semiconductor device 100 in theform of a transistor element in an advanced manufacturing stage. Aspreviously explained, the transistor 100 may comprise drain and sourceregions 111 formed in a corresponding portion of a semiconductor layer102. The semiconductor layer 102 may be a part of a substantiallycrystalline material of a substrate 101, typically a silicon substrate,or the semiconductor layer 102 may be formed on a buried insulatinglayer (not shown), when an SOI configuration is considered. Moreover,above a channel region 112, a gate electrode structure 110 is formed,which is to be understood as a placeholder structure since essentialportions thereof are to be removed in a later manufacturing stage. Asillustrated, the gate electrode structure 110 typically comprises a gatedielectric material 110A formed on the channel region 112 and typicallycomprised of silicon dioxide, which may have a thickness that isappropriate for acting as a gate dielectric material in other deviceregions in which less critical performance requirements may have to bemet. For example, the gate dielectric material 110A may represent asilicon dioxide layer with a thickness of 2 nm and more. Furthermore, apolysilicon material 110B is formed on the gate dielectric layer 110A inaccordance with well-established device architecture. Additionally, dueto the advanced manufacturing stage of the device 100, metal silicidematerial 110C is typically formed in an upper portion of the polysiliconmaterial 110B, and corresponding metal silicide regions 113 may also beprovided in the drain and source regions. The gate electrode structure110 may further comprise a spacer structure 110D, for instance in theform of an etch stop liner 110E and a spacer element 110F, which aretypically comprised of silicon dioxide and silicon nitride,respectively. Furthermore, a first dielectric layer 103, for instance inthe form of a silicon nitride material and the like, is typically formedabove the gate electrode structure 110 and the drain and source regions111, wherein a more or less pronounced internal stress level may beprovided in the layer 103, depending on the overall process strategy. Asis well known, inducing a specific strain component in the channelregion 112 may result in a corresponding lattice distortion, which inturn may modify the charge carrier mobility therein. By applying thelayer 103 with a moderately high internal stress level, a desired typeof strain may therefore be created in the channel region 112, ifdesired. Moreover, an interlayer dielectric material 104 in the form ofsilicon dioxide is formed above the layer 103.

Typically, the semiconductor device 100 is formed on the basis of thefollowing process strategy. After defining corresponding active regions(not shown) in the semiconductor layer 102, a basic dopant profile maybe established, for instance by implantation techniques, therebydefining the conductivity of corresponding transistor elements.Thereafter, the material of the gate dielectric layer 110A and the gateelectrode material 110B may be formed, for instance, by performingwell-established oxidation processes and the like, followed by thedeposition of the polysilicon material on the basis of well-establishedlow pressure chemical vapor deposition (CVD) techniques. Thereafter,sophisticated lithography and etch processes may be performed in orderto provide an appropriate etch mask that substantially determines thelateral dimension of the gate electrode structure 110, i.e., of thecorresponding polysilicon material. During the complex patterningprocess, a process inherent profile of the gate electrode material 110Bmay be generated due to the nature of the corresponding etch processes,which may result in a certain degree of corner rounding and the like ofthe etch mask, thereby also creating a tapering of the polysiliconmaterial. In sophisticated applications in which a gate length of 50 nmand less is to be established, the corresponding degree of tapering mayresult in a variation of gate length from top to bottom, as indicated by110T and 110L, respectively. For example, for an effective gate length,i.e., the length 110L, of approximately 45 nm, the corresponding gatelength at the top of the structure 110, i.e., the length 110T, may beless by approximately 25% and even more for a typical gate height ofapproximately 80-100 nm, as may be required for obtaining the desiredion blocking effect of the gate electrode structure 110. A correspondingpronounced degree of tapering may, however, have a negative effect in alater manufacturing stage when the materials 110A, 110B, in combinationwith metal silicide material 110C, are to be replaced by a high-kdielectric material and a metal-containing gate electrode material.

After patterning the polysilicon material, the further processing may becontinued by forming appropriate offset spacers and incorporating dopantspecies as required for establishing a desired dopant profile connectingto the channel region 112. Furthermore, further implantation processesmay be performed on the basis of a more or less advanced stage of thespacer structure 110D, thereby finally obtaining the overall dopantprofile for the drain and source regions 111. Thereafter, any final hightemperature processes may be performed, for instance for activatingdopants and re-crystallizing implantation-induced damage. Consequently,during the entire process sequence, the well-known and well-establishedcharacteristics of the polysilicon material 110B in combination with thesilicon dioxide based gate dielectric material 110A may provide areliable process sequence. Thereafter, the dielectric material 103 isdeposited, for instance, by plasma enhanced CVD techniques, followed bythe deposition of the material 104, for instance in the form of asilicon dioxide material. Next, a chemical mechanical polishing (CMP)process 105 is typically performed in order to remove material of thelayers 104, 103 thereby exposing the gate electrode structure 110.

FIG. 1 b schematically illustrates the transistor 100 in a furtheradvanced manufacturing stage. As illustrated, a top surface 110S of thegate electrode structure 110 is exposed, for instance by the previouslyperformed planarization process 105 (FIG. 1 a), thereby also removing aportion of the metal silicide material 110C. Next, the gate electrodematerial 110B and the residue of metal silicide material 110C areremoved, for instance on the basis of a wet chemical etch process 106,which may be performed on the basis of an etch chemistry having a highselectivity between silicon material and silicon dioxide and siliconnitride. For example, a plurality of appropriate wet chemical etchchemistries are available, such as TMAH (tetra methyl ammoniumhydroxide) which may be used at an elevated temperature of approximately50-80° C. In this case, TMAH, when provided in higher concentrations,has an excellent selectivity with respect to silicon dioxide and siliconnitride while efficiently removing silicon material. Consequently, afteretching through the remaining portion of the metal silicide region 110C,the polysilicon material 110B may be efficiently removed. Thereafter, afurther etch process is typically applied in order to remove the silicondioxide based gate dielectric material 110A, which may be accomplishedon the basis of hydrofluoric acid and the like. Consequently, afterremoving the materials 110B and 110A, a high-k dielectric material incombination with a metal-containing electrode material may be depositedin order to obtain the gate electrode structure 110 with enhancedperformance.

FIG. 1 c schematically illustrates the device 100 during a processsequence in which a high-k dielectric material 115, for instance hafniumoxide and the like, is deposited with a desired thickness, for instance10-25 Å in sophisticated applications, followed by the deposition of ametal-containing electrode material 116, for instance in the form oftitanium nitride and the like. In particular, during the deposition ofthe metal-containing material 116, the inverse tapering of the openingformed during the removal of the gate electrode material 110B (FIG. 1 b)may result in deposition-related non-uniformities, for instance in theform of voids 116A and the like, which may result in reduced reliabilityand in a complete gate failure, thereby contributing to increased yieldlosses.

Consequently, although the replacement of a conventional gate electrodestructure by sophisticated high-k dielectrics and metal-containingelectrode materials in a very advanced manufacturing stage may beadvantageous in view of reliability of the high-k dielectric materialand the gate electrode material, the tapering of the previously formedpolysilicon placeholder material may contribute to a significantreliability issue, so that the conventional strategy described above isless desirable.

The present disclosure is directed to various methods and devices thatmay avoid, or at least reduce, the effects of one or more of theproblems identified above.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

Generally, the present disclosure relates to semiconductor devices andmethods for forming the same in which a portion of the gate electrodestructure may be replaced by sophisticated materials in an advancedmanufacturing stage, while deposition-related irregularities may besubstantially avoided or at least significantly reduced by reducing thedegree of tapering in an opening that is created in a dielectricmaterial after the removal of the placeholder structure. To this end, amaterial layer may be deposited and may be subsequently anisotropicallyetched prior to depositing the metal-containing electrode material,thereby enhancing the deposition condition by significantly reducing thedegree of inverse tapering in the corresponding opening. In someillustrative embodiments disclosed herein, the deposition and thesubsequent anisotropic etching may result in a “sidewall spacer” in theopening, the thickness of which may increase with increasing depthwithin the opening, thereby reducing the degree of tapering.Consequently, the subsequent deposition of the metal-containingelectrode material may be accomplished on the basis of less restrictivedeposition conditions, thereby enabling a reliable filling of thecorresponding opening. In other illustrative aspects disclosed herein,the tapering of the resulting opening may be relaxed on the basis of themetal-containing gate electrode material itself, wherein a first portionthereof may be deposited and may be subsequently anisotropically etched,followed by one or more further deposition and etch cycles so that acorresponding “conductive sidewall spacer” may be formed for enhancingthe deposition conditions for a final deposition step for completelyfilling the resulting opening.

One illustrative method disclosed herein comprises removing a first gateelectrode material from a gate electrode structure of a transistor thatis laterally embedded in a dielectric material. The method furthercomprises forming a sidewall spacer in an opening formed in thedielectric material by removing the first gate electrode material.Finally, the method comprises forming a second gate electrode materialon a high-k dielectric layer that is formed at least at the bottom ofthe opening.

A further illustrative method disclosed herein comprises removing aplaceholder material of a gate electrode structure of a transistor byforming an opening in a dielectric material. Moreover, the methodcomprises depositing a first material layer in the opening andperforming an anisotropic etch process to remove a portion of the firstmaterial layer. Additionally, the method comprises depositing a secondmaterial layer to fill the opening, wherein the second materialcomprises a metal-containing gate electrode material.

One illustrative semiconductor device disclosed herein comprises ahigh-k dielectric layer formed above a channel region of a transistor.Moreover, the semiconductor device comprises a metal-containingelectrode material formed on the high-k dielectric layer and having atop surface. The metal-containing electrode material has a first lengthat an interface with the high-k dielectric material and has a secondlength at the top surface, wherein the first length is approximately 50nm or less and wherein the second length is less than the first lengthby approximately 15% of the first length or less.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1 a-1 c schematically illustrate cross-sectional views of atransistor element during various manufacturing stages when forming asophisticated gate electrode structure by replacing the polysiliconmaterial and the silicon dioxide material in a very advancedmanufacturing stage on the basis of conventional process strategies;

FIGS. 2 a-2 e schematically illustrate cross-sectional views of asemiconductor device during various manufacturing stages in which asophisticated gate electrode may be formed on the basis of a high-kdielectric material and a metal-containing electrode material in anadvanced manufacturing stage by improving the degree of tapering in acorresponding opening prior to actually filling the opening with themetal-containing electrode material, according to illustrativeembodiments; and

FIGS. 2 f-2 g schematically illustrate cross-sectional views of thesemiconductor device in which the degree of tapering may be reduced, forinstance on the basis of a metal-containing material and additionallyprovided etch stop material and the like, according to still furtherillustrative embodiments.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present subject matter will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details that arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary and customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definition willbe expressly set forth in the specification in a definitional mannerthat directly and unequivocally provides the special definition for theterm or phrase.

Generally, the subject matter disclosed herein provides enhancedtechniques and devices wherein sophisticated high-k dielectric metalgate stacks may be formed after completing the basic transistorstructures and after forming a portion of an interlayer dielectricmaterial, thereby ensuring a high degree of compatibility withwell-established CMOS integration regimes. Additionally, enhanced gateintegrity may be accomplished by improving the tapering, i.e., reducingthe degree of tapering of an opening after the removal of theplaceholder material, such as the polysilicon material, by depositing atleast one material layer and performing an anisotropic etch process soas to obtain a “sidewall spacer” element having an increased width atthe bottom of the opening so that a significant reduction of the inversetapering may be accomplished. Consequently, well-established regimes forpatterning polysilicon-based gate electrodes may be used without causingsignificant yield losses, as may be the case for conventional processstrategies. The reduction of degree of inverse tapering may beaccomplished by providing a well-established dielectric material, suchas silicon nitride, which may be deposited in a highly conformal manner,for instance so as to not close the corresponding opening after theremoval of the polysilicon material so that a subsequent anisotropicetch process may result in a “narrowing” of the corresponding opening atthe bottom thereof. Consequently, during the subsequent deposition ofthe high-k dielectric material and the metal-containing electrodematerial, the probability of creating deposition-related irregularitiesmay be significantly reduced. In some illustrative embodiments, thesilicon-based gate dielectric may be maintained during the anisotropicetch process so, without any additional deposition steps, enhanced etchstop capabilities may be provided during the patterning of the “spacerelement,” while, in other cases, a dedicated etch stop material may bedeposited first, followed by deposition of the spacer material. In stillother illustrative embodiments, the spacer material may be removedselectively to the channel region. In still other illustrativeembodiments, enhanced etch stop capabilities may be accomplished duringthe reduction of the degree of inverse tapering by providing a high-kdielectric material prior to the deposition of the spacer material, forinstance in the form of hafnium oxide, which may exhibit excellent etchstop capabilities.

In other illustrative embodiments disclosed herein, the reduction ofinverse tapering may be accomplished on the basis of the electrodematerial itself by performing at least one intermediate anisotropic etchprocess, thereby creating a corresponding “spacer element” prior toperforming a further deposition step in order to finally completely fillthe corresponding opening. In this manufacturing sequence, the enhancedetch stop capabilities of the high-k dielectric material may be takenadvantage of Consequently, the initial gate length, i.e., the length ofthe electrode material at the bottom of the gate electrode structure,may be substantially maintained while nevertheless significantlyreducing the probability of creating deposition-related irregularities.

With reference to FIGS. 2 a-2 g, further illustrative embodiments willnow be described in more detail, wherein reference may also be made toFIGS. 1 a-1 c, if required.

FIG. 2 a schematically illustrates a semiconductor device 200 comprisinga substrate 201 above which may be formed a semiconductor layer 202. Forexample, the substrate 201 and the layer 202 may represent a bulkconfiguration, i.e., the substrate 201 and the layer 202 may represent acrystalline semiconductor material or at least the layer 202 may have athickness that is significantly greater than a corresponding verticalextension of respective drain and source regions 211 formed in thesemiconductor layer 202. In other cases, an SOI configuration may beprovided, at least locally within the semiconductor device 200, as isalso previously discussed with reference to the device 100. Furthermore,in the manufacturing stage shown, a gate electrode structure 210 of atransistor 250 may be partially removed, thereby forming an opening 210o that is embedded in a dielectric material. For example, the gateelectrode structure 210 may comprise a liner material 210E incombination with a spacer element 210F, which may be provided in theform of a silicon dioxide material and a silicon nitride material, as isalso previously explained with reference to the device 100. Furthermore,interlayer dielectric materials 203 and 204, for instance in the form ofsilicon nitride, nitrogen-containing silicon carbide, silicon dioxideand the like, may be provided so as to laterally enclose the gateelectrode structure 210. Moreover, due to the advanced manufacturingstage, corresponding metal silicide regions 213 may be formed in thedrain and source regions 211.

The semiconductor device 200 may be formed on the basis of similarprocess techniques as previously described with reference to the device100. Consequently, during the manufacturing sequence for forming thegate electrode structure 210, a corresponding degree of tapering may becreated, as previously explained. Hence, the corresponding opening 210 omay also exhibit the corresponding tapering, which may also be referredto as an inverse or negative tapering. Consequently, a first length 210Lat the bottom of the opening 210 o may be 50 nm and less for highlysophisticated applications, while, on the other hand, a second length210T taken at the top of the opening 210 o may be significantly reduced,for instance by approximately 20% or more relative to the first length210L. For example, for a design value of the effective gate length 210Lof 45 nm, the second length 210T may be in the range of approximately 35nm or even less. Consequently, by reducing the degree of inversetapering, any deposition-related irregularities in filling the opening210 o may be significantly reduced. To this end, a corresponding “spacerelement” may be formed to reduce the first length 210L substantiallywithout affecting the second length 210T. It should be appreciated that,in some illustrative embodiments, a corresponding reduction of thelengths 210L, 210T may be accomplished on the basis of a dielectricmaterial, which may result in a corresponding reduction of the effectivechannel length. In this case, the position of the PN junctions 211P,formed on the basis of the initial length 210L, may be consideredinappropriate in order to obtain the desired transistor performanceafter reducing the effective gate length 210L. Hence, according to someillustrative embodiments, the preceding manufacturing sequence may bemodified with respect to forming the drain and source regions 211, forinstance by appropriately adapting the process parameters of annealprocesses in order to provide an increased thermal diffusion, therebydriving the PN junctions farther into the channel region 212, asindicated by the dashed line 211N. In still other illustrativeembodiments, in addition to or alternatively to appropriately adaptingthe anneal parameters, corresponding parameters of an implantationsequence may be modified, for instance with respect to using a tiltangle and the like, in order to appropriately position the PN junctions211N with respect to the final effective channel length still to beadjusted.

In other illustrative embodiments, the initial length 210L may besubstantially maintained while nevertheless providing enhanceddeposition conditions. In this case, a corresponding adaptation of thePN junction 211P may not be necessary.

FIG. 2 b schematically illustrates the device 200 in an advancedmanufacturing stage. As illustrated, the device 200 may be exposed to adeposition ambient 207 in order to deposit a spacer layer 208 within theopening 210 o without, however, not completely closing the opening 210o. In the embodiment shown, a gate dielectric layer 210 a of the initialgate electrode structure 210 may be maintained during the removal of acorresponding polysilicon material in order to act as an etch stopmaterial during the further processing when anisotropically etching thespacer layer 208. Consequently, enhanced integrity of the channel region212 may be maintained throughout the subsequent process steps. Thespacer layer 208 may be comprised of any appropriate dielectricmaterial, such as silicon nitride, silicon dioxide and the like, whencompatible with the further processing of the device. For example, thespacer layer 208 may be provided with an appropriate thickness ofapproximately 3-10 nm when measured at horizontal device portions.Consequently, a significant deposition of material may also beaccomplished along the sidewalls of the opening 210 o. For this purpose,well-established deposition techniques, as may also be used for otherspacer formation processes, may be applied, for instance thermallyactivated CVD techniques when corresponding temperatures are compatiblewith the state of the device 200, while in other cases plasma enhancedCVD techniques and the like may be used.

FIG. 2 c schematically illustrates the semiconductor device 200 in afurther advanced manufacturing stage in which an anisotropic etchprocess 209 may be performed, for instance on the basis ofwell-established etch chemistries, which may also be used in spacerpatterning sequences. For example, the anisotropic etch process 209 maybe performed on the basis of etch chemistry that has a high degree ofselectivity with respect to silicon dioxide material so that theremaining gate dielectric layer 210A may act as an efficient etch stopmaterial, while increasingly material of the layer 208 may be removed.Due to the anisotropic nature of the process 209, finally acorresponding spacer element 208A may be generated, thereby reducing thewidth at the bottom of the opening 210 o due to the increasing width ofthe spacer 208A.

FIG. 2 d schematically illustrates the semiconductor device 200 whenexposed to a further etch ambient 220 that is designed to remove theetch stop material from the bottom of the opening 210 o, therebyexposing the channel region 212. In the above-mentioned embodiment, thepreviously provided gate dielectric layer 210A (FIG. 2 c) may have beenused as an etch stop material, which may be selectively removed to thematerial of the channel region 212 by well-established wet chemical etchtechniques, such as hydrofluoric acid and the like. Since the gatedielectric material 210A may be moderately thin, undue material erosionof the channel region 212 may be less critical. In other illustrativeembodiments, a dedicated etch stop layer may be deposited, for instanceafter removing the gate dielectric layer 210A, prior to the depositionof the spacer layer 208 (FIG. 2 b), as will be described later on inmore detail. Thereafter, further processing may be continued on thebasis of well-established process techniques, i.e., by depositing ahigh-k dielectric material followed by the deposition of ametal-containing electrode material having the desired characteristicwith respect to work function and the like in order to comply with therequired transistor characteristics of the device 250. Due to thesignificantly reduced inverse tapering of the opening 210 o, enhanceddeposition conditions are provided which may result in a significantlyreduced probability of creating deposition-related irregularities, as isthe case in the conventional process strategy.

FIG. 2 e schematically illustrates the semiconductor device 200 in afurther advanced manufacturing stage. As illustrated, the gate electrodestructure 210 may comprise a high-k dielectric gate material 215 with anappropriate thickness in accordance with transistor requirements andalso a metal-containing electrode material 216, such as titanium nitrideand the like, may be formed on the high-k dielectric material 215.Furthermore, due to the presence of the dielectric spacer elements 208A,the first length 210L may be reduced compared to the initial length 210L(FIG. 2 a) so that a difference between the length 210T and 210L issignificantly less pronounced. For example, the second length 210T may,at most, be less than the first length by approximately 15% or less. Inother cases, the second length 210T may be less by approximately 10% orless. In still other illustrative embodiments, a difference between thefirst and second lengths may still be less pronounced than specifiedabove. Furthermore, in some cases, the first length may be less than thesecond length according to the percentage as specified above. Aspreviously explained, if a significant reduction of the first length210L may be accomplished by means of the spacer element 208A, and if acorresponding reduction may be considered inappropriate for PN junctions211P, established on the basis of the initial length, the correspondingprocess flow may be appropriately adapted so as to obtain the PNjunctions 211N. Moreover, in some illustrative embodiments, theformation of the spacer element 208A may be used as a compensationmechanism for appropriately adapting the gate length 210L to the actualchannel length, which may vary due to corresponding fluctuations duringthe patterning of the initial gate electrode structure, such as thestructure 110 illustrated in FIG. 1 a. This may be accomplished byappropriately selecting an initial thickness of the spacer layer 208(FIG. 2 b).

Consequently, the transistor 250 may be provided with the sophisticatedgate electrode structure 210 comprising the metal-containing gateelectrode material 216 and the high-k dielectric material 215substantially without any deposition-related irregularities, whilenevertheless maintaining a high degree of compatibility with theconventional process strategies.

FIG. 2 f schematically illustrates the semiconductor device 200according to further illustrative embodiments. In one embodiment, theprevious gate dielectric layer 210A (FIG. 2 c) may have been removedaccording to conventional strategies, or may have been maintained (notshown). Furthermore, during the deposition process 207, a dedicated etchstop layer 215A may be formed, followed by the deposition of the spacerlayer 208. In some illustrative embodiments, the etch stop material 215Amay be provided in the form of a silicon dioxide material by usingwell-established process techniques. In other illustrative embodiments,the etch stop layer 215A may be comprised of a high-k dielectricmaterial, such as hafnium oxide, which may exhibit superior etch stopcapabilities compared to silicon dioxide. Consequently, based on theetch stop layer 215A, the further processing may be continued, aspreviously described, for instance by performing the anisotropic etchprocess 209 (FIG. 2 c) and removing the etch stop layer 215A, i.e., anexposed portion thereof, after forming the corresponding spacerelements. Thereafter, the further processing may be continued, aspreviously described.

In other illustrative embodiments, the etch stop layer 215A may beprovided in the form of the high-k dielectric material and the spacerlayer 208 may be deposited as a metal-containing electrode material,however with an appropriate thickness so as to act as a “spacer layer.”

FIG. 2 g schematically illustrates a cross-sectional view of the device200 during an anisotropic etch process 209A that is designed to removematerial of the layer 208 selectively to the etch stop layer 215A, i.e.,the high-k dielectric material having the superior etch stopcapabilities. Consequently, even if a portion of the etch stop material215A may be exposed at the bottom of the opening 210 o during the etchprocess 209A in order to appropriately reduce the degree of tapering, aspreviously explained, undue material erosion of the layer 215A may besuppressed. In still other illustrative embodiments, the initialthickness of the layer 208 and the process parameters of the process209A may be adjusted such that a minimum thickness may be maintainedabove the layer 215A, so that material erosion may be avoided.Thereafter, a further layer of the metal-containing material may bedeposited, for instance in order to substantially completely fill theopening 210 o or, in other illustrative embodiments, perform a furtheranisotropic etch process to further enhance the profile of the resultingopening 210 o. Thereafter, one or more additional deposition/etch cyclesmay be performed and finally the opening 210 o may be completely filledwith the electrode material 208. Consequently, the initial length 210Lmay be substantially maintained, except for a minor reduction due to thethickness of the dielectric layer 215A. Thus, respective adaptations ofthe previous manufacturing flow with respect to reducing the effectivechannel length may not be necessary.

As a result, the present disclosure provides semiconductor devices andtechniques for forming the same in which the deposition conditions fordepositing a metal-containing gate electrode material after removal ofthe polysilicon material may be enhanced by reducing the degree ofnegative tapering prior to completely filling the corresponding opening.For this purpose, in some illustrative embodiments, a dielectric spacerelement may be formed prior to depositing a metal-containing material,while in other cases the electrode material itself may be used as aspacer material.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Accordingly, the protection sought herein is as set forth inthe claims below.

1. A method, comprising: removing a first gate electrode material from agate electrode structure of a transistor, said transistor beinglaterally embedded in a dielectric material; forming a sidewall spacerin an opening formed in said dielectric material by removing said firstgate electrode material; and forming a second gate electrode material ona high-k dielectric layer formed at least at a bottom of said opening.2. The method of claim 1, wherein forming said sidewall spacer in saidopening comprises depositing a dielectric material and anisotropicallyetching said dielectric layer.
 3. The method of claim 2, wherein saiddielectric layer is deposited so as to not completely close saidopening.
 4. The method of claim 2, wherein forming said sidewall spacerin said opening further comprises maintaining a gate dielectric layer ofsaid gate electrode structure and using said gate dielectric layer as anetch stop layer when anisotropically etching said dielectric layer. 5.The method of claim 1, wherein forming said sidewall spacer comprisesdepositing a dielectric material layer, depositing a spacer materiallayer on said dielectric material layer and anisotropically etching saidspacer material layer while using said dielectric material layer as anetch stop.
 6. The method of claim 5, wherein said spacer material layercomprises a metal-containing material.
 7. The method of claim 5, whereinsaid dielectric material layer comprises a high-k dielectric material.8. The method of claim 6, further comprising depositing a further layerof said metal-containing material.
 9. The method of claim 1, furthercomprising removing a portion of a gate dielectric material of said gateelectrode structure in the presence of said sidewall spacer and formingsaid high-k dielectric material in said opening.
 10. The method of claim1, wherein said sidewall spacer comprises silicon nitride.
 11. Themethod of claim 1, wherein said first gate electrode material has alength of approximately 50 nm or less at an interface formed with a gatedielectric material of said gate electrode structure.
 12. A method,comprising: removing a placeholder material of a gate electrodestructure of a transistor by forming an opening in a dielectricmaterial; depositing a first material layer in said opening; performingan anisotropic etch process to remove a portion of said first materiallayer; and depositing a second material layer to fill said opening, saidsecond material layer comprising a metal-containing gate electrodematerial.
 13. The method of claim 12, wherein depositing said firstmaterial layer comprises depositing a dielectric material.
 14. Themethod of claim 12, further comprising maintaining a placeholder gatedielectric material in said opening and using said placeholder gatedielectric material as an etch stop layer when performing saidanisotropic etch process.
 15. The method of claim 12, further comprisingforming an etch stop layer prior to depositing said first materiallayer.
 16. The method of claim 15, wherein said etch stop layercomprises a high-k dielectric material.
 17. The method of claim 12,further comprising depositing a high-k dielectric layer after performingsaid anisotropic etch process.
 18. The method of claim 12, wherein saidfirst material layer is deposited as a metal-containing material. 19.The method of claim 18, further comprising depositing at least onefurther material layer after performing said anisotropic etch processand performing at least one further anisotropic etch process prior todepositing said second material layer.
 20. A semiconductor device,comprising: a high-k dielectric layer formed above a channel region of atransistor; and a metal-containing electrode material formed on saidhigh-k dielectric layer and having a top surface, said metal-containingelectrode material having a first length at an interface with saidhigh-k dielectric material and having a second length at said topsurface, said first length being approximately 50 nm or less, saidsecond length being less than or greater than said first length byapproximately 15 percent of said first length or less.
 21. Thesemiconductor device of claim 20, wherein said second length is lessthan or greater than said first length by approximately 10 percent ofsaid first length or less.